Nitride based semiconductor light emitting element and its fabrication process

氮化物系半导体发光元件及其制造方法

Abstract

本发明提供支持基板的强度特性优异,并且来自该支持基板的反射光少的、提高了光获取效率的半导体元件及其制造方法。本发明的构成为:在基板上按顺序至少层叠n型半导体层、发光层、p型半导体层、金属膜层、镀覆金属板而成的氮化物系半导体发光元件中,所述金属膜层和所述镀覆金属板部分地形成于所述p型半导体层上。或者,本发明的构成为:在按顺序至少层叠n型半导体层、发光层、p型半导体层、金属膜层、金属板而成的结构中,所述金属膜层和所述镀覆金属板部分地形成于所述p型半导体层上,在所述p型半导体层上的没有形成所述金属膜层和所述镀覆金属板的部分上形成有透光性物质层。
Disclosed is a semiconductor device which is improved in outcoupling efficiency since reflection by the supporting substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for manufacturing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially arranged in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially arranged in this order, which device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.

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